Datasheet > ES1B

ES1B

更新时间： 2024-11-18 10:15:19

品牌	Logo	应用领域
元耀 - YENYO		整流二极管光电二极管 IOT
页数	文件大小	规格书
2页	742K
描述
Surface Mount Efficient Fast Recovery Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ES1B 数据手册

ES1A THRU ES1J

Surface Mount Efficient Fast Recovery Rectifier

YENYO

Voltage Range 50 to 600 V

Current 1.0 Ampere

Features

 Fast switching for high efficiency

 Low forward voltage drop

 High current capability

SMA/DO-214AC

 Low reverse leakage current

 High surge current capability

 Glass passivated chip

.055(1.40)

.062(1.60)

.098(2.50)

.114(2.90)

.157(4.00)

.181(4.60)

Mechanical Data

.006(.152)

.012(.305)

 Case: Molded plastic SMA/DO-214AC

 Epoxy: UL 94V-0 rate flame retardant

 Terminals: Solderable per MIL-STD-750

method 2026

 Polarity:Color band denotes cathode

 Mounting position: Any

.078(2.00)

.096(2.44)

.002(.051)

.008(.203)

.030(0.76)

.060(1.52)

.188(4.80)

.208(5.28)

 Weight: 0.064 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

CHARACTERISTIC

SYMBOL

ES1A

ES1B

ES1D

ES1G

ES1J

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

Current TA=55^oC

1.0

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@ 1.0 A

0.92

1.3

1.5

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

^oCW

R JA

Operating Junction and Storage

Temperature Range

^oC

-55 to +150

TJ, TSTG

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to ambient.

1 / 2

R1, JUL-11

中文翻译

下载PDF

与ES1B相关器件

型号	品牌	获取价格	描述	数据表
ES1B (ER1B)	HOTTECH	获取价格	SMA(DO-214AC)
ES1B_NL	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
ES1B-13	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1B-13-F	DIODES	获取价格	1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
ES1B-7	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
ES1B-A	ANBON	获取价格	SMA
ES1BAF	CZSTARSEA	获取价格	SMAF
ES1B-A-Q1	ANBON	获取价格	SMA
ES1BAS	CZSTARSEA	获取价格	SMAS
ES1BB	PACELEADER	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER