Datasheet > ES1BE-T

ES1BE-T

更新时间： 2024-11-01 20:08:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	144K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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ES1BE-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.26	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ES1BE-T 数据手册

M C C

ES1AE

THRU

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

Micro Commercial Components

ES1ME

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1 Amp Super Fast

Recovery

Features

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Silicon Rectifier

50 to 1000 Volts

High Temp Soldering: 260qC for 10 Seconds At Terminals

Superfast Recovery Times For High Efficiency

Maximum Ratings

Operating Temperature: -50qC to +150qC

Storage Temperature: -50qC to +150qC

Maximum Thermal Resistance; 15qC/W Junction To Lead

DO-214AC

(SMAE)

MCC

Part

Number

Maximum

Recurrent

Marking Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

Device

Cathode Band

ES1AE

ES1BE

ES1CE

ES1DE

ES1GE

ES1JE

ES1KE

ES1ME

ES1A

ES1B

ES1C

ES1D

ES1G

ES1J

ES1K

ES1M

50V

100V

150V

200V

400V

600V

800V

1000V

35V

70V

100V

150V

105V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25qC Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_J= 75qC

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

ES1AE-DE

I_FSM

30A

8.3ms, half sine

DIMENSIONS

INCHES

MIN

.079

.050

.002

---

MIN

DIM

MAX

.096

.075

.008

.02

MAX

2.44

1.90

.20

NOTE

2.01

1.27

.05

---

.51

.030

.189

.157

.090

.060

.208

.180

.115

.76

1.52

5.30

4.57

2.92

V_F

.975V

1.35V

1.70V

I_FM= 1.0A;

T_J= 25qC*

4.80

4.00

2.29

ES1GE-JE

ES1KE~ME

SUGGESTED SOLDER

PAD LAYOUT

0.090”

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

5PA

T_J= 25qC

100PA T_J= 100qC

Maximum Reverse

Recovery Time

ES1AE-DE

0.085”

T_rr

C_J

50ns

75ns

100ns

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

ES1GE-KE

ES1ME

Typical Junction

Capacitance

45pF

Measured at

1.0MHz, V_R=4.0V

0.070”

*Pulse test: Pulse width 200 Psec, Duty cycle 2%

www.mccsemi.com

Revision: 5

2007/06/19

1 of 4

12 3 4

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与ES1BE-T相关器件

型号	品牌	获取价格	描述	数据表
ES1BE-TP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, S
ES1BE-TP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SAME, 2 PIN
ES1BF	PANJIT	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER
ES1BF	SUNMATE	获取价格	1.0A patch fast recovery diode 100V SMAF series
ES1BF	CJ	获取价格	SMAF
ES1BF	BL Galaxy Electrical	获取价格	1A,100V,35ns, Surface Mount Fast Recovery Rectifiers
ES1BF	KEXIN	获取价格	Super-Fast Recovery Rectifier
ES1BF	RECTRON	获取价格	Reverse Voltage Vr : 100 V;Forward Current Io : 1.0 A;Max Surge Current : 30 A;Forward Vol
ES1B-F	ANBON	获取价格	SMAF
ES1BF (ER1BF)	HOTTECH	获取价格	SMAF