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ES1BE

更新时间: 2024-11-01 03:34:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 143K
描述
1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts

ES1BE 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ES1BE 数据手册

 浏览型号ES1BE的Datasheet PDF文件第2页浏览型号ES1BE的Datasheet PDF文件第3页浏览型号ES1BE的Datasheet PDF文件第4页 
M C C  
ES1AE  
THRU  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
Micro Commercial Components  
ES1ME  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
1 Amp Super Fast  
Recovery  
Features  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Silicon Rectifier  
50 to 1000 Volts  
x
x
High Temp Soldering: 260qC for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
x
x
x
Operating Temperature: -50qC to +150qC  
Storage Temperature: -50qC to +150qC  
Maximum Thermal Resistance; 15qC/W Junction To Lead  
DO-214AC  
(SMAE)  
MCC  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
Device  
H
Cathode Band  
ES1AE  
ES1BE  
ES1CE  
ES1DE  
ES1GE  
ES1JE  
ES1KE  
ES1ME  
ES1A  
ES1B  
ES1C  
ES1D  
ES1G  
ES1J  
ES1K  
ES1M  
50V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
100V  
150V  
J
105V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
Electrical Characteristics @ 25qC Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75qC  
G
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
ES1AE-DE  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
2.01  
1.27  
.05  
B
C
D
---  
.51  
E
.030  
.189  
.157  
.090  
.060  
.208  
.180  
.115  
.76  
1.52  
5.30  
4.57  
2.92  
VF  
.975V  
1.35V  
1.70V  
IFM = 1.0A;  
TJ = 25qC*  
G
H
4.80  
4.00  
2.29  
ES1GE-JE  
ES1KE~ME  
J
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
5PA  
TJ = 25qC  
100PA TJ = 100qC  
Maximum Reverse  
Recovery Time  
ES1AE-DE  
0.085”  
Trr  
CJ  
50ns  
75ns  
100ns  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
ES1GE-KE  
ES1ME  
Typical Junction  
Capacitance  
45pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 200 Psec, Duty cycle 2%  
www.mccsemi.com  
Revision: 5  
2007/06/19  
1 of 4  

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