Datasheet > ES1BBF3

ES1BBF3

更新时间： 2024-01-10 08:13:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	443K
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中文翻译

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数据手册

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ES1BBF3 数据手册

RoHS

ES1AB THRU ES1KB

COMPLIANT

Surface Mount Super Fast Recovery Rectifier

Features

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● High forward surge capability

● Super Fast reverse recovery time

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Typical Applications

For use in high frequency rectification of power

supplies, inverters, converters, and freewheeling diodes for

consumer and telecommunication.

Mechanical Data

●

ackage: DO-214AA (SMB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Cathode line denotes the cathode end

Polarity:

(T =25℃ Unless otherwise specified

■

Maximum Ratings

）

ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB

PARAMETER

SYMBOL

UNIT

ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB

Device marking code

100

150

200

300

1.0

400

500

600

800

Repetitive peak reverse voltage

RRM

Average rectified output current

@60Hz sine wave, resistance load,

TL (Fig.1)

Surge(non-repetitive)forward current

@60Hz half-sine wave,1 cycle, Ta=25℃

FSM

℃

-55~+150

Storage temperature

Junction temperature

stg

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

TEST

CONDITIONS

ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB

PARAMETER

SYMBOL

UNIT

Maximum instantaneous

forward voltage drop per diode

=1.0A

0.95

1.3

1.7

1.85

I_F=0.5A,I_R=1.0A,

I_rr=0.25A

Maximum reverse recovery time

T =25℃

5.0

Maximum DC reverse current at

rated DC blocking voltage per

diode @ VRM=VRRM

μA

RRM

T =125℃

100

1 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S784

Rev. 2.2,06-Jun-16

www.21yangjie.com

12 3 4 5

中文翻译

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