Photodiode
EPD-150-0-3.6
Preliminary
6/21/2007
Technology
rev. 05/07
Type
Case
Wavelength
UV
Schottky Contact
GaP
TO-39 + sapphire window
Description
Wide bandwidth and high sensitivity from VUV up
to the visible spectrum (150 nm - 550 nm),
mounted in hermetically sealed TO-39 package
with sapphire window
chip location
chip location
Anode
Applications
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
13,5 ± 1,0
2,00 ± 0,05
sapphire
ELC-81
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
10.9
7.0
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-40 to +125
-40 to +125
120
°C
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
5
Typ
Max
80
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR = 5 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
VR
ID
V
pA
20
λp
Peak sensitivity wavelength
Responsivity at λP
440
0.17
nm
Sλ
A/W
nm
λmin, λmax
∆λ0.5
RSH
NEP
D*
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
150
50
550
180
70
1.5x10-14
2.2x1012
2.6
nm
GΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 440 nm
λ = 440 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time (RL = 50 Ω)
nF
ns
VR = 5 V
tr, tf
1/130
VR = 0 V
Ee = 1 mW/cm²
Photo current at λ = 254 nm1,2)
IPh
5.4
µA
1)for information only
2)measured with Hg-LP-VUV/UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢀ]
Quantity
Type
Lot N°
EPD-150-0-3.6EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545