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EPD-150-0-3.6 PDF预览

EPD-150-0-3.6

更新时间: 2024-11-30 10:14:23
品牌 Logo 应用领域
EPIGAP 光电二极管光电二极管
页数 文件大小 规格书
2页 53K
描述
Photodiode

EPD-150-0-3.6 数据手册

 浏览型号EPD-150-0-3.6的Datasheet PDF文件第2页 
Photodiode  
EPD-150-0-3.6  
Preliminary  
6/21/2007  
Technology  
rev. 05/07  
Type  
Case  
Wavelength  
UV  
Schottky Contact  
GaP  
TO-39 + sapphire window  
Description  
Wide bandwidth and high sensitivity from VUV up  
to the visible spectrum (150 nm - 550 nm),  
mounted in hermetically sealed TO-39 package  
with sapphire window  
chip location  
chip location  
Anode  
Applications  
Medical engineering (dermatology), output check  
of UV - lamps and oil or gas burner flame,  
measurement and control of ecological  
parameters, radiation control for a solarium, UV  
water purification facilities  
13,5 ± 1,0  
2,00 ± 0,05  
sapphire  
ELC-81  
Miscellaneous Parameters  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test сonditions  
Symbol  
Value  
Unit  
Active area  
A
10.9  
7.0  
mm²  
%/K  
°C  
Temperature coefficient of ID  
Operating temperature range  
Storage temperature range  
Acceptance angle at 50% Sλ  
TC(ID)  
Tamb  
Tstg  
-40 to +125  
-40 to +125  
120  
°C  
deg.  
ϕ
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test conditions  
Symbol  
Min  
5
Typ  
Max  
80  
Unit  
Breakdown voltage1)  
Dark current  
IR = 10 µA  
VR = 5 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 10 mV  
VR  
ID  
V
pA  
20  
λp  
Peak sensitivity wavelength  
Responsivity at λP  
440  
0.17  
nm  
Sλ  
A/W  
nm  
λmin, λmax  
∆λ0.5  
RSH  
NEP  
D*  
Sensitivity range at 1%  
Spectral bandwidth at 50%  
Shunt resistance  
150  
50  
550  
180  
70  
1.5x10-14  
2.2x1012  
2.6  
nm  
GΩ  
Noise equivalent power  
Specific detectivity  
W/ Hz  
λ = 440 nm  
λ = 440 nm  
VR = 0 V  
cm Hz W 1  
CJ  
Junction capacitance  
Switching time (RL = 50 )  
nF  
ns  
VR = 5 V  
tr, tf  
1/130  
VR = 0 V  
Ee = 1 mW/cm²  
Photo current at λ = 254 nm1,2)  
IPh  
5.4  
µA  
1)for information only  
2)measured with Hg-LP-VUV/UV-emitter as radiation source  
Note: All measurements carried out with EPIGAP equipment  
Labeling  
RD (typ.) [G]  
Quantity  
Type  
Lot N°  
EPD-150-0-3.6EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 2  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

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