EPA160A-100P
UPDATED 02/15/2005
High Efficiency Heterojunction Power FET
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NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
29.0
31.0
31.0
11.5
8.0
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 12GHz
f= 18GHz
dBm
P1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
f= 12GHz
f= 18GHz
9.5
dB
%
G1dB
PAE
41
Vds=8 V, Ids=50% Idss
Saturated Drain Current
Transconductance
f=12GHz
290
320
480
500
-1.0
-15
-14
33*
660
-2.5
mA
mS
V
Idss
Gm
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=4.5mA
Igd=1.6mA
Vp
Pinch-off Voltage
-13
-7
V
BVgd
BVgs
Rth
Drain Breakdown Voltage
Source Breakdown Voltage
V
Igs=1.6mA
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
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Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
CONTINUOUS1,2
8V
Vds
Vgs
-3V
Ids
435mA
Igsf
Forward Gate Current
Input Power
14mA
Pin
@ 3dB Compression
150 oC
Tch
Channel Temperature
Storage Temperature
Total Power Dissipation
Tstg
Pt
-65 to +150 oC
3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised February 2005