Datasheet > EPA160B

EPA160B

更新时间： 2024-11-09 06:57:31

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	32K
描述
High Efficiency Heterojunction Power FET

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EPA160B 数据手册

EPA160B

Excelics

DATA SHEET

High Efficiency Heterojunction Power FET

540

•

+31.0dBm TYPICAL OUTPUT POWER

5.5dB TYPICAL POWER GAIN AT 18GHz

0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

Idss SORTED IN 40mA PER BIN RANGE

156

370

100

•

120

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

29.0

31.0

10.5

5.5

P_1dB

dBm

f=18GHz

f=12GHz

f=18GHz

9.0

G_1dB

PAE

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

290

320

480

660

-2.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

500

-1.0

-15

-14

Vds=3V, Ids=4.5mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.6mA

Source Breakdown Voltage Igs=1.6mA

Thermal Resistance (Au-Sn Eutectic Attach)

-11

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-3V

Idss

435mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

80mA

14mA

28dBm

175^oC

-65/175^oC

@3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

4.1W

3.4W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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