Datasheet > EPA160B-100P

EPA160B-100P

更新时间： 2024-11-09 06:57:31

品牌	Logo	应用领域
EXCELICS		/
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High Efficiency Heterojunction Power FET

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EPA160B-100P 数据手册

EPA160B-100P

UPDATED 05/05/2006

High Efficiency Heterojunction Power FET

•

NON-HERMETIC 100MIL METAL FLANGE PACKAGE

+31.0dBm TYPICAL OUTPUT POWER

10dB TYPICAL POWER GAIN AT 12GHz

0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY AND HIGH RELIABILITY

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

29.0

31.0

10.0

5.0

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f= 12GHz

f= 18GHz

dBm

P_1dB

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

f= 12GHz

f= 18GHz

8.5

G_1dB

PAE

Vds=8 V, Ids=50% Idss

Saturated Drain Current

Transconductance

f=12GHz

290

320

480

500

-1.0

-15

-14

35*

660

-2.5

Idss

Vds=3V, Vgs=0V

Vds=3V, Ids=4.5mA

Igd=1.6mA

Pinch-off Voltage

-13

-7

BVgd

BVgs

Rth

Drain Breakdown Voltage

Source Breakdown Voltage

Igs=1.6mA

ºC/W

Thermal Resistance (Au-Sn Eutectic Attach)

Note: * Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

Vds

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reserve Gate Current

Input Power

ABSOLUTE¹

CONTINUOUS²

12V

-5V

Vgs

-3V

Igsf

7.2 mA

-1.2 mA

28 dBm

175^oC

2.4 mA

Igsr

-0.4 mA

@ 3dB Compression

175^oC

Tch

Channel Temperature

Storage Temperature

Total Power Dissipation

Tstg

-65/175^oC

4.0 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 1

Revised May 2006

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