Datasheet > ENA0747B

ENA0747B

更新时间： 2024-09-13 12:51:15

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	396K
描述
General-Purpose Switching Device Applications

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中文翻译

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数据手册

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ENA0747B 数据手册

2SK4125

Ordering number : ENA0747B

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SK4125

Features

•

ON-resistance R (on)=0.47 (typ.)

Input capacitance Ciss=1200pF (typ.)

10V drive

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

600

±30

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

2.5

170

150

°C

Allowable Power Dissipation

Tc=25 C (SANYO’s ideal heat dissipation condition)*1

Channel Temperature

Tch

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *2

Avalanche Current *3

78.8

1 SANYO’s condition is radiation from backside.

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

2 V =50V, L=500μH, I =17A (Fig.1)

3 L 500μH, single pulse

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package : TO-3P-3L

7539-002

• JEITA, JEDEC : SC-65, TO-247, SOT-199

• Minimum Packing Quantity : 30 pcs./magazine

2SK4125-1E

4.8

15.6

Marking

Electrical Connection

7.0

1.5

3.2

K4125

13.6

LOT No.

2.0

3.0

1.0

0.6

1 : Gate

2 : Drain

3 : Source

5.45

SANYO : TO-3P-3L

http://semicon.sanyo.com/en/network

62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701

No. A0747-1/7

12 3 4 5 6 7

中文翻译

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