Ordering number : ENA0851
ECH8653
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ECH8653
Features
• Low ON-resistance.
•
4V drive.
• Best suited for LiB charging and discharging switch.
• Common-drain type.
•
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
20
±10
7.5
40
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW≤10µs, duty cycle≤1%
A
DP
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm)
1.4
1.5
150
W
W
°C
°C
D
P
T
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=20V, V =0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
V
(off)
GS
=10V, I =1mA
1.0
3.4
2.4
D
Forward Transfer Admittance
Marking : WY
yfs
=10V, I =4A
5.8
S
D
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
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