Datasheet > EMX4T2R

EMX4T2R

更新时间： 2024-09-15 23:50:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管
页数	文件大小	规格书
1页	60K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 18V V(BR)CEO \| 50MA I(C) \| SOT-363VAR

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数据手册

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EMX4T2R 数据手册

EMX4 / UMX4N / IMX4

Transistors

High transition frequency (dual transistors)

EMX4 / UMX4N / IMX4

!External dimensions (Units : mm)

!Features

1) Two 2SC3837K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f^T=1.5GHz)

3) Low output capacitance. (Cob=0.95pF)

EMX4

( )

1.2

1.6

!Equivalent circuits

EMX4 / UMX4N

IMX4

ROHM : EMT6

UMX4N

Each lead has same dimensions

(3) (2)

(1)

(4) (5)

(6)

(4)

(5)

(6)

(3)

(2)

(1)

1.25

2.1

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

0.1Min.

VCBO

VCEO

VEBO

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

EMX4 / UMX4N

IMX4

150(TOTAL)

300(TOTAL)

150

∗1

∗2

Collector power

dissipation

IMX4

Junction temperature

Storage temperature

°C

Tstg

−55~+150

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

1.6

2.8

!Package, marking, and packaging specifications

0.3Min.

Type

EMX4

EMT6

UMX4N

UMT6

IMX4

SMT6

Package

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

Marking

Code

T2R

T108

3000

Basic ordering unit (pieces)

8000

3000

!Electrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

Max.

−

Conditions

Unit

BV^CBO

BVCEO

BVEBO

−

=10µA

=1mA

−

=10µA

CB=10V

EB=2V

CBO

EBO

CE(sat)

FE1 / FE2

−

0.5

270

0.5

µA

−

Emitter cutoff current

DC current transfer ratio

−

0.5

600

−

CE/I

=10V/10mA

=20mA/4mA

=10V/10mA

C/I

Collector-emitter saturation voltage

−

CE/I

hFE pairing

Transition frequency

1500

0.95

−

1.6

∗

MHz

CE/I

=10V/10mA, f=200MHz

Output capacitance

Cob

CB/f=10V/1MHz, I =0A

∗Transition frequency of the device.

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