Datasheet > EMZ1

EMZ1

更新时间： 2024-11-09 10:12:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	1133K
描述
Silicon Epitaxial Planar

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EMZ1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.57	Is Samacsys：	N
Base Number Matches：	1

EMZ1 数据手册

EMZ1

0.15 W, ±150 mA, ±60 V

Silicon Epitaxial Planar

Power Management (Dual Transistors)

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-563

FEATURES

ꢀ

2SA1037AK and 2SC2412K are housed independently in a package.

Transistor elements independent, eliminating interference.

Mounting cost and area can be cut in half.

3 2 1

MARKING AND EQUIVALENT CIRCUIT

Millimeter

Min. Max.

0.09 0.16

0.45 0.55

0.17 0.27

0.10 0.30

REF.

TR2

TR1

Min.

1.50

Max.

1.70

0.525 0.60

1.10

1.30

4 5 6

0.05

TR1 ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous

Collector Power Dissipation

Junction & Storage Temperature

V_CBO

V_CEO

V_EBO

I_C

P_C

T_J, T_STG

0.15

℃

150, -55~150

TR1 NPN ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL MIN. TYP.

MAX.

UNIT

µA

TEST CONDITIONS

I_C=50µA, I_E=0

I_C=1mA, I_B=0

I_E=50µA, I_C=0

V_CB=60V, I_E=0

V_EB=7V, I_C=0

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

V_CE=12V, I_C=2mA, f=100MHz

V_CB=12V, I_E=0, f=1MHz

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

0.1

560

0.4

I_EBO

h_FE

120

V_CE(sat)

f_T

C_ob

MHz

180

2.0

3.5

TR2 ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current – Continuous

Collector Power Dissipation

Junction & Storage Temperature

V_CBO

V_CEO

V_EBO

I_C

P_C

T_J, T_STG

-60

-50

-6

-0.15

℃

0.15

150, -55~150

TR2 PNP ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL MIN. TYP.

MAX.

UNIT

TEST CONDITIONS

I_C=-50µA, I_E=0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-60

-50

I_C=-1mA, I_B=0

-6

I_E=-50µA, I_C=0

-0.1

560

-0.5

µA

V_CB=-60V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB=-6V, I_C=0

DC Current Gain

h_FE

120

V_CE=-6V, I_C=-1mA

I_C=-50mA, I_B=-5mA

V_CE=-12V, I_C=-2mA, f=100MHz

V_CB=-12V, I_E=0, f=1MHz

Collector-Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

140

MHz

Collector Output Capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Oct-2009 Rev. B

Page 1 of 4

12 3 4

中文翻译

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