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EMZ1DXV6T1 PDF预览

EMZ1DXV6T1

更新时间: 2024-09-14 22:08:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 67K
描述
Dual General Purpose Transistors

EMZ1DXV6T1 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:LEAD FREE, CASE 463A-01, 6 PIN针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHzBase Number Matches:1

EMZ1DXV6T1 数据手册

 浏览型号EMZ1DXV6T1的Datasheet PDF文件第2页浏览型号EMZ1DXV6T1的Datasheet PDF文件第3页浏览型号EMZ1DXV6T1的Datasheet PDF文件第4页浏览型号EMZ1DXV6T1的Datasheet PDF文件第5页浏览型号EMZ1DXV6T1的Datasheet PDF文件第6页 
EMZ1DXV6T1,  
EMZ1DXV6T5  
Product Preview  
Dual General Purpose  
Transistors  
NPN/PNP Dual (Complimentary)  
http://onsemi.com  
This transistor is designed for general purpose amplifier  
applications. It is housed in the SOT−563 which is designed for low  
power surface mount applications.  
(3)  
(2)  
(1)  
Q
Lead−Free Solder Plating  
Q
1
2
Low V  
, t0.5 V  
CE(SAT)  
(4)  
(5)  
(6)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
−60  
Unit  
V
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
4
5
−50  
V
6
−6.0  
−100  
V
3
2
1
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
I
C
mAdc  
SOT−563  
CASE 463A  
PLASTIC  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation T = 25°C  
P
357  
(Note 1)  
2.9  
mW  
A
D
Derate above 25°C  
mW/°C  
°C/W  
3Z D  
(Note 1)  
Thermal Resistance,  
Junction-to-Ambient  
R
350  
(Note 1)  
q
JA  
3Z = Specific Device Code  
= Date Code  
D
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
500  
(Note 1)  
4.0  
mW  
A
D
Derate above 25°C  
mW/°C  
°C/W  
°C  
ORDERING INFORMATION  
(Note 1)  
Device  
Package  
Shipping†  
Thermal Resistance,  
Junction-to-Ambient  
R
250  
(Note 1)  
q
JA  
EMZ1DXV6T1  
SOT−563  
4 mm Pitch  
4000/Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
EMZ1DXV6T5  
SOT−563  
2 mm Pitch  
8000/Tape & Reel  
1. FR−4 @ Minimum Pad.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. P0  
EMZ1DXV6/D  

EMZ1DXV6T1 替代型号

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