EMP212-P1
UPDATED: 05/15/2008
9.0 – 12.0 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
9.0 – 12.0 GHz Operating Frequency Range
30.0dBm Output Power at 1dB Compression
16.0 dB Typical Small Signal Gain
Excelics
EMP212
-P1
-40dBc OIMD3 @Each Tone Pout 19.5dBm
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Optional Packaging solutions are available
Contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=800mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9.0
12.0
GHz
dBm
dB
P1dB
Gss
Output Power at 1dB Gain Compression
28.0
13.0
30.0
16.0
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19.5dBm
OIMD3
-40
-37
dBc
Input RL
Output RL
Idss
Input Return Loss
Output Return Loss
-10
-10
1238
7
-8
-6
dB
dB
Saturate Drain Current
Power Supply Voltage
V
DS =3V, VGS =0V
990
-35
1486
8
mA
VDD
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
7.5
oC/W
ºC
Tb
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
VGS
IDD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
8 V
-4 V
Idss
IGSF
PIN
Forward Gate Current
Input Power
16mA
@ 3dB compression
150°C
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/150°C
15.8W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised May 2008