Datasheet > EMP21N03HR

EMP21N03HR

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	944K
描述
EDFN5X6

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EMP21N03HR 数据手册

EMP21N03HR

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

30V

2.3mΩ

100A

RDSON (MAX.)

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

100

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current¹

I_D

T_C= 100 °C

Pulsed Drain Current²

I_DM

I_AS

400

Avalanche Current

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

E_AS

E_AR

211

105

Repetitive Avalanche Energy³

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

100% UIS testing in condition of V_D=15V, L=0.1mH, V_G=10V, I_L=40A, Rated V_DS=30V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

2.5

°C / W

Junction-to-Ambient⁴

¹Package Limited.

R_JA

²Pulse width limited by maximum junction temperature.

³Duty cycle  1％

⁴50°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/8/13

p.1

12 3 4 5 6 7

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