EMP214-Q5
UPDATED 04/24/2008
12.50 – 15.50 GHz Surface-Mounted PA
FEATURES
•
•
•
•
12.5 – 15.5 GHz Operating Frequency Range
29.5dBm Output Power at 1dB Compression
14.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=750mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
EMP214 – Q5
12.5
13.5
12.5
28.5
12.0
15.5
15.5
14.5
F
Operating Frequency Range
GHz
EMP214H – Q5
EMP214L – Q5
P1dB
Gss
Output Power at 1dB Gain Compression
29.5
14.0
dBm
dB
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Ids=60%±10%Idss
OIMD3
-41
-38
dBc
Input RL
Input Return Loss
-13
-13
-10
-10
dB
dB
Output RL Output Return Loss
Idss
Saturate Drain Current VDS =3V, VGS =0V
920
-35
1150
1380
mA
VDD
Rth
Tb
Power Supply Voltage
Thermal Resistance1
7
V
oC/W
ºC
12
Operating Base Plate Temperature
+75
MAXIMUM RATINGS AT 25°C2,3
SYMBOL
VDS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
ABSOLUTE
12 V
CONTINUOUS
8 V
VGS
-8 V
-4 V
IDD
Idss
1300mA
IGSF
PIN
Forward Gate Current
Input Power
114mA
27dBm
175°C
19mA
@ 3dB compression
150°C
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175°C
-65/150°C
12.4W
10.4W
1. Measured result when used with Excelics recommended evaluation board.
2. Operating the device beyond any of the above rating may result in permanent damage.
3. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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May 2008