Datasheet > EMP213

EMP213

更新时间： 2024-09-24 06:57:07

品牌	Logo	应用领域
EXCELICS		放大器功率放大器
页数	文件大小	规格书
4页	202K
描述
12.5 - 15.5 GHz Power Amplifier MMIC

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EMP213 数据手册

EMP213

UPDATED 05/08/2008

12.5 – 15.5 GHz Power Amplifier MMIC

FEATURES

•

12.5 – 15.5 GHz Operating Frequency Range

27.0dBm Output Power at 1dB Compression

16.0 dB Typical Small Signal Gain

-41dBc OIMD3 @Each Tone Pout 17dBm

APPLICATIONS

Dimension: 2250um X 1130um

Thickness: 85um ± 15um

•

Point-to-point and point-to-multipoint radio

Military Radar Systems

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25 °C, 50 ohm, VDD=7V, IDQ=400mA)

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

12.5

26.0

14.0

TYP

MAX

UNITS

GHz

dBm

Operating Frequency Range

15.5

Output Power at 1dB Gain Compression

Small Signal Gain

P1dB

Gss

27.0

16.0

Output 3^rdOrder Intermodulation Distortion

@∆f=10MHz, Each Tone Pout 17dBm

Ids = 60% +10%Idss

OIMD3

-41

-38

dBc

Input RL

Output RL

Input Return Loss

Output Return Loss

Noise Figure

-12

-8

-5

Idss

Saturated Drain Current

Drain Voltage

_DS=3V, V_GS=0V

475

-35

620

750

^oC/W

V_DD

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

Operating Base Plate Temperature

+85

ºC

MAXIMUM RATINGS AT 25°C^1,2

SYMBOL

Vds

V_GS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

ABSOLUTE

CONTINUOUS

8 V

12V

-8V

- 4 V

Ids

Idss

650mA

9.5 mA

I_GSF

Forward Gate Current

Input Power

57mA

24dBm

175°C

-65/175°C

6.2W

P_IN

@ 3dB compression

150°C

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

P_T

-65/150°C

5.2W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH–Tb)/R_TH

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised May 2008

12 3 4

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