Datasheet > EMP114-P1

EMP114-P1

更新时间： 2024-11-12 06:57:07

品牌	Logo	应用领域
EXCELICS		放大器功率放大器
页数	文件大小	规格书
2页	90K
描述
7.0 - 9.0 GHz Power Amplifier MMIC

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中文翻译

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数据手册

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EMP114-P1 数据手册

EMP114-P1

UPDATED: 05/08/2008

7.0 – 9.0 GHz Power Amplifier MMIC

FEATURES

•

7.0 – 9.0 GHz Operating Frequency Range

30.0dBm Output Power at 1dB Compression

18.0 dB Typical Small Signal Gain

Excelics

EMP114

-P1

-40dBc OIMD3 @Each Tone Pout 20dBm

APPLICATIONS

•

Point-to-point and point-to-multipoint radio

Military Radar Systems

Optional Packaging solutions are available

Contact the Excelics sales team for details.

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25 °C, 50 ohm, VDD= 7 V, IDQ= 800 mA)

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

TYP

MAX

UNITS

Operating Frequency Range

7.0

9.0

GHz

dBm

P1dB

Gss

Output Power at 1dB Gain Compression

28.5

16.0

30.0

18.0

Small Signal Gain

Output 3^rdOrder Intermodulation Distortion

@∆f=10MHz, Each Tone Pout 20dBm

OIMD3

-40

dBc

Input RL

Output RL

Idss

Input Return Loss

Output Return Loss

-12

-6

Saturate Drain Current

Power Supply Voltage

_DS=3V, V_GS=0V

992

- 35

1240

1488

V_DD

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

Operating Base Plate Temperature

7.5

^oC/W

ºC

+ 85

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2

SYMBOL

V_DS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

VALUE

8 V

V_GS

- 4 V

I_DD

Idss

I_GSF

Forward Gate Current

Input Power

18 mA

P_IN

@ 3dB compression

150°C

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

-65/150°C

P_T

15.2W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation V_DS*I_DS< (T_CH–T_HS)/R_TH; where T_HS= ambient temperature

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised May 2008

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