Datasheet > EMP19K03HPCS

EMP19K03HPCS

更新时间： 2024-11-13 17:15:55

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
10页	1010K
描述
EDFN5X6

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EMP19K03HPCS 数据手册

EMP19K03HPCS

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N-CH-Q1 N-CH-Q2

BVDSS

RDSON (MAX.)

30V

5.7mΩ

48A

2.2mΩ

90A

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

±20

100

Gate-Source Voltage

V_GS

±12

T_C= 25 °C

Continuous Drain Current

I_D

T_A= 25 °C(t≦10s)

T_A= 25 °C(Steady-State)

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

250

L = 0.1mH, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

180

Repetitive Avalanche Energy²

T_C= 25 °C

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

100% UIS testing in condition of Q1 V_D=25V, L=0.1mH, V_G=10V, I_L=20A, Rated V_DS=30V N-CH

100% UIS testing in condition of Q2 V_D=25V, L=0.1mH, V_G=10V, I_L=38A, Rated V_DS=30V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

Steady State

TYPICAL

MAXIMUM

5.8

UNIT

3.1

R_JC

R_JA

Junction-to-Ambient

Steady State

°C / W

t ≦ 10 s

2019/3/24

p.1

12 3 4 5 6 7...10

中文翻译

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