Datasheet > EM6AA160TS-4G

EM6AA160TS-4G

更新时间： 2022-12-28 03:30:51

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
51页	401K
描述
16M x 16 bit DDR Synchronous DRAM (SDRAM)

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EM6AA160TS-4G 数据手册

EM6AA160TS

EtronTech

V_DDQ

V_SSQ

V_REF

Supply

DQ Power: 2.5V 5%.. Provide isolated power to DQs for improved noise immunity.

DQ Ground: Provide isolated ground to DQs for improved noise immunity.

Reference Voltage for Inputs: +0.5*V_DDQ

No Connect: These pins should be left unconnected.

Etron Confidential

Rev. 0.7

July 2008

1 2 3 456 7 8...51

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型号	品牌	描述	获取价格	数据表
EM6AA160TS-5G	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格
EM6AA160TSA	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格
EM6AA160TSA-4G	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格
EM6AA160TSA-5G	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格
EM6AA160TSC-4G	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格
EM6AA160TSC-5G	ETRON	16M x 16 bit DDR Synchronous DRAM (SDRAM)	获取价格