EM6AB160
EtronTech
32M x 16 bit DDR Synchronous DRAM (SDRAM)
Advance (Rev. 1.3, Jun. /2015)
Overview
Features
The EM6AB160 SDRAM is a high-speed CMOS double
data rate synchronous DRAM containing 512 Mbits. It is
internally configured as a quad 8M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs
Fast clock rate: 250/200MHz
•
•
Differential Clock CK &
Bi-directional DQS
CK
•
•
•
•
•
•
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 8M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
occur at both rising edges of CK and
. Read and
CK
write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command. The EM6AB160 provides
programmable Read or Write burst lengths of 2, 4, or 8.
An auto precharge function may be enabled to provide
a self-timed row precharge that is initiated at the end of
the burst sequence. The refresh functions, either Auto
or Self Refresh are easy to use. In addition, EM6AB160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual byte write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
•
•
•
•
•
•
•
•
•
Precharge & active power down
±
Power supplies: VDD & VDDQ = 2.5V 0.2V
Operating Temperature: T = 0~70°C
A
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb and Halogen free
Package: 60-Ball, 8x13x1.2 mm (max) FBGA
- Pb free and Halogen Free
•
Table 1. Ordering Information
Part Number
Clock Frequency
Data Rate
Package
EM6AB160TSE-4G
EM6AB160TSE-5G
250MHz
200MHz
250MHz
200MHz
500Mbps/pin
400Mbps/pin
500Mbps/pin
400Mbps/pin
TSOPII
TSOPII
FBGA
EM6AB160WKE-4H
EM6AB160WKE-5H
FBGA
TS : indicates TSOPII package
WK: indicates 8x13x1.2 mm FBGA package
E: indicates Generation Code
G: indicates Pb and Halogen free for TSOPII Package
H: indicates Pb and Halogen free for FBGA Package
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
5秒后页面跳转
资料手册解读：UC3842参数和管脚说明
一文带你了解无源晶振的负载电容为何要加两颗谐振电容CL1和CL2
玻璃管保险丝与陶瓷管保险丝：区别与替代性探讨
PCF8574资料解读：主要参数分析、引脚说明
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
