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EM6AB080WKB-5H PDF预览

EM6AB080WKB-5H

更新时间: 2022-02-26 11:43:43
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
62页 563K
描述
64M x 8 bit DDR Synchronous DRAM (SDRAM

EM6AB080WKB-5H 数据手册

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EM6AB080  
EtronTech  
64M x 8 bit DDR Synchronous DRAM (SDRAM)  
Etron Confidential  
Advanced (Rev. 1.1, Dec. /2013)  
Features  
Overview  
The EM6AB080 SDRAM is a high-speed CMOS  
double data rate synchronous DRAM containing 512  
Mbits. It is internally configured as a quad 16M x 8-bit  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal, CK).  
Fast clock rate: 250/200MHz  
Differential Clock CK &  
Bi-directional DQS  
CK  
DLL enable/disable by EMRS  
Fully synchronous operation  
Internal pipeline architecture  
Four internal banks, 16M x 8-bit for each bank  
Programmable Mode and Extended Mode registers  
- CAS Latency: 2, 2.5, 3  
Data outputs occur at both rising edges of CK and  
.
CK  
Read and write accesses to the SDRAM are burst  
oriented; accesses start at a selected location and  
continue for a programmed number of locations in a  
programmed sequence. Accesses begin with the  
registration of a BankActivate command which is then  
followed by a Read or Write command. The EM6AB080  
provides programmable Read or Write burst lengths of  
2, 4, or 8. An auto precharge function may be enabled  
to provide a self-timed row precharge that is initiated at  
the end of the burst sequence. The refresh functions,  
either Auto or Self Refresh are easy to use. In addition,  
- Burst length: 2, 4, 8  
- Burst Type: Sequential & Interleaved  
Individual byte write mask control  
DM Write Latency = 0  
Auto Refresh and Self Refresh  
8192 refresh cycles / 64ms  
EM6AB080 features  
programmable DLL option. By  
having a programmable mode register and extended  
mode register, the system can choose the most  
suitable modes to maximize its performance. These  
devices are well suited for applications requiring high  
memory bandwidth, result in a device particularly well  
suited to high performance main memory and graphics  
applications.  
Precharge & active power down  
±
Power supplies: VDD & VDDQ = 2.5V 0.2V  
Interface: SSTL_2 I/O Interface  
Package: 66 Pin TSOP II, 0.65mm pin pitch  
- Pb and Halogen free  
Package: 60-Ball, 8x13x1.2 mm (max) TFBGA  
- Pb free and Halogen Free  
Table 1.Ordering Information  
Part Number  
Clock Frequency  
Data Rate  
Package  
EM6AB080TSB-4G  
250MHz  
200MHz  
250MHz  
200MHz  
500Mbps/pin  
400Mbps/pin  
500Mbps/pin  
400Mbps/pin  
TSOPII  
TSOPII  
TFBGA  
TFBGA  
EM6AB080TSB-5G  
EM6AB080WKB-4H  
EM6AB080WKB-5H  
TS: indicates TSOPII package  
WK: indicates TFBGA package  
B: indicates Generation Code  
G: indicates Pb free and Halogen Free for TSOPII Package  
H: indicates Pb free and Halogen Free for TFBGA Package  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc. reserves the right to change products or specification without notice.  

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