SMD-LED
ELS-740-994
16.11.2007
Technology
AlGaAs/AlGaAs
rev. 05
Type
SMD
Case
Radiation
Infrared
TOPLED
Description
2,8 ± 0,2
2,2 ± 0,1
High-power, high speed LED in
1,9 ± 0,2
TOPLED PLCC-2 package, compact
design allows for easy circuit board
mounting and assembling of arrays
Cathode
1
Applications
Optical communications, remote control,
light barriers, measurement applications
and security systems, automation
2
Anode
0,15
0,5 ± 0,2
2
ELC-67
Anode
Absolute Maximum Ratings
at Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
IF
Value
50
Unit
mA
mA
mA
mW
°C
DC forward current
tp ≤ 50 µs, tp/T ≤ 0.5
tp ≤ 10 µs
IFM
Peak forward current
Surge forward current
Power dissipation
100
ISFM
P
1000
125
Tamb
Tstg
Operating temperature range
Storage temperature range
-40 to +85
-40 to +90
°C
Electrical and Optical Characteristics
at Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
Typ
2.0
Max
2.5
Unit
conditions
IF =50 mA
IF = 100 µA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
VF
VR
Forward voltage
Reverse voltage
Radiant power
V
V
5
Φe
mW
nm
nm
deg.
ns
5.0
730
6.5
740
30
λp
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
750
∆λ0.5
120
30
ϕ
tr , tf
Switching time
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545