Datasheet > EK42650A-01

EK42650A-01

更新时间： 2024-11-30 06:56:19

品牌	Logo	应用领域
PSEMI		开关
页数	文件大小	规格书
11页	453K
描述
SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz

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中文翻译

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EK42650A-01 数据手册

Product Specification

PE42650A

SP3T High Power UltraCMOS™

RF Switch 30 MHz - 1000 MHz

Product Description

Features

The following specification defines an SP3T (single pole three

throw) switch for use in cellular and other wireless applications.

It has both a standard and attenuated RX mode. The

PE42650A uses Peregrine’s UltraCMOS™ process and also

features HaRP™ technology enhancements to deliver high

linearity and exceptional harmonics performance. HaRP™

technology is an innovative feature of the UltraCMOS™

process providing upgraded linearity performance.

•

50 Watt P1dB compression point

10 Watts <8:1 VSWR (Normal

Operation)

•

38 dB TX-RX Isolation

2f_oand 3f_o< -81 dBc @10 Watts

ESD rugged to 2.0 kV HBM

No blocking capacitors required

32-lead 5x5 mm QFN package

The PE42650A is manufactured on Peregrine’s UltraCMOS™

process, a patented variation of silicon-on-insulator (SOI)

technology on a sapphire substrate, offering the performance

of GaAs with the economy and integration of conventional

CMOS.

Figure 1. Functional Diagram

Figure 2. Package Type

32-lead 5x5 mm QFN

TX1

ESD

TX2

ANT

ESD

CMOS

Control Driver

and ESD

CTRL

Document No. 70-0267-02 │ www.psemi.com

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