Datasheet > EK-42693-01

EK-42693-01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
PSEMI		开关
页数	文件大小	规格书
4页	99K
描述
SP9T UltraCMOS 2.75 V Switch 100 - 3000 MHz, +68 dBm IIP3

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EK-42693-01 数据手册

Product Brief

PE42693 DIE

SP9T UltraCMOS™ 2.75 V Switch

100 – 3000 MHz, +68 dBm IIP3

Figure 1. Functional Diagram

Features

• Two GSM/PCS/EDGE compliant TX

ports, three TRX ports (WCDMA band or

receive), and four RX ports

TRX3 WCDMA

WCDMA TRX1

WCDMA TRX2

GSM/EDGE TX1

GSM/EDGE TX2

• Four pin CMOS logic control with

integral decoder/driver

RX1

RX2

RX3

RX4

• Exceptional harmonic performance:

2f_o= -87 dBc and 3f_o= -76 dBc

• Low TRX insertion loss: 0.7 dB at

900 MHz, 0.9 dB at 1900 MHz

• TX – RX Isolation of 51 dB at 900 MHz,

45 dB at 1900 MHz

• 1500 V HBM ESD tolerance all ports

• +68 dBm IIP3 @ 50 Ω

CMOS

Control Driver

and ESD

• -110 dBm IMD3

V4 V3 V2 V1

• No blocking capacitors required

Figure 2. Die Top View

Product Description

TRX3

TRX1

ANT

The PE42693 is a HaRP™-enhanced SP9T RF

Switch developed on the UltraCMOS™ process

technology. It addresses the specific design

needs of the Quad-Band GSM Handset

Antenna Switch Module Market for use in GSM/

PCS/EDGE/DCS/WCDMA handsets. The

switch is comprised of two transmit ports that

can be used for GSM/PCS/EDGE, three

GND

RX1

GND

TRX2

ANT

GND

RX2

GND ²³

GND

RX3

TX1

GND

RX4

ANT

GND

TX2

GND

transmit/receive ports (TRX1, TRX2 and TRX3)

that can be used for either WCDMA or as

receive ports, and four symmetric receive ports.

An on-chip CMOS decode logic facilitates four-

pin low voltage CMOS control. High ESD

tolerance of 1500 V at all ports, no blocking

capacitor requirements, and on-chip SAW filter

over-voltage protection devices make this the

ultimate in integration and ruggedness.

GND

14 13

Note: Redundant antenna pads for flexible impedance matching

Figure 3. Package Type: Wirebond Die

Peregrine’s HaRP™ technology enhancements

deliver high linearity and exceptional harmonics

performance. It is an innovative feature of the

UltraCMOS™ process, providing performance

superior to GaAs with the economy and

integration of conventional CMOS.

Document No. 70-0231-01 │ www.psemi.com

Contact sales@psemi.com for full version of datasheet

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