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EGP10BT50R PDF预览

EGP10BT50R

更新时间: 2024-11-08 19:50:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 47K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, D4, 2 PIN

EGP10BT50R 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:D4, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:2.5 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

EGP10BT50R 数据手册

 浏览型号EGP10BT50R的Datasheet PDF文件第2页浏览型号EGP10BT50R的Datasheet PDF文件第3页 
EGP10A - EGP10K  
Features  
Superfast recovery time for high  
efficiency.  
Low forward voltage, high current  
capability.  
Low leakage current.  
DO-41  
COLOR BAND DENOTES CATHODE  
High surge current capability.  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
10A 10B 10C 10D 10F 10G 10J 10K  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current,  
50  
100  
150 200 300 400 600 800  
V
A
1.0  
.375 " lead length @ T = 55 C  
°
L
IFSM  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
30  
A
Storage Temperature Range  
-65 to +150  
-65 to +150  
C
C
Tstg  
TJ  
°
°
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
2.5  
50  
W
RθJA  
C/W  
°
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Parameter  
Units  
10A 10B 10C 10D 10F 10G 10J 10K  
VF  
trr  
Forward Voltage @ 1.0 A  
0.95  
22  
1.25  
1.7  
V
Reverse Recovery Time  
50  
75  
ns  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
IR  
5.0  
100  
A
µ
µA  
Reverse Current @ rated VR T = 25 C  
°
A
TA = 125°C  
CT  
Total Capacitance  
15  
pF  
VR = 4.0 V, f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
EPG10A - EPG10K, Rev. C  

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