Spec. No. : C749E3
Issued Date : 2006.07.26
Revised Date :
CYStech Electronics Corp.
Page No. : 1/3
E10AFmp1. Gl0assCPaXssivXateEd Ef3ficieSnt FeastrRieecosvery Rectifiers
Features
• Fast switching for high efficiency
• Low forward voltage drop
• High current capability
• Low reverse leakage current
• High surge current capability
Mechanical Data
• Case: Molded plastic, TO-220AB
• Terminals: Solderrable per MIL-STD-202 method 208
• Epoxy: UL 94V-0 rate flame retardant
• Mounting Position: Any
• Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Type
Parameter
Symbol
Units
V
EF
EF
EF
EF
EF
10C01 10C02 10C03 10C05 10C06
Maximum Recurrent peak reverse
voltage
VRRM
50
100
200
400
600
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
35
50
70
100
140
200
280
400
420
600
V
V
Maximum instantaneous forward
VF
0.95
1.25
1.85
V
voltage@ IF=5A
Maximum Average forward rectified
I(AV)
10
A
℃
current @ TL=100
Peak forward surge current @8.3ms
single half sine wave superimposed
on rated load (JEDEC method)
Maximum DC reverse current
IFSM
100
A
℃
VR=VRRM,TJ=25
IR
10
µA
250
℃
VR=VRRM,TJ=125
Diode junction capacitance @ f=1MHz
and applied 4V reverse voltage
Maximum reverse recovery time@
IF=0.5A, IR=1A, Irr=0.25A
Typical thermal resistance, junction to
lead
CJ
trr
65
25
pF
ns
RθJC
2.2
℃
/W
Storage temperature
Tstg
TJ
-55 ~ +150
-55 ~ +150
℃
℃
Operating temperature
EF10CXXE3
CYStek Product Specification