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EF10C06 PDF预览

EF10C06

更新时间: 2022-02-26 10:45:10
品牌 Logo 应用领域
全宇昕 - CYSTEKEC /
页数 文件大小 规格书
3页 189K
描述
10Amp. Glass Passivated Efficient Fast Recovery Rectifiers

EF10C06 数据手册

 浏览型号EF10C06的Datasheet PDF文件第2页浏览型号EF10C06的Datasheet PDF文件第3页 
Spec. No. : C749E3  
Issued Date : 2006.07.26  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/3  
E10AFmp1. Gl0assCPaXssivXateEd Ef3ficieSnt FeastrRieecosvery Rectifiers  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Mechanical Data  
Case: Molded plastic, TO-220AB  
Terminals: Solderrable per MIL-STD-202 method 208  
Epoxy: UL 94V-0 rate flame retardant  
Mounting Position: Any  
Weight: 2.24 grams  
Maximum Ratings and Electrical Characteristics  
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,  
resistive or inductive load. For capacitive load, derate current by 20%.)  
Type  
Parameter  
Symbol  
Units  
V
EF  
EF  
EF  
EF  
EF  
10C01 10C02 10C03 10C05 10C06  
Maximum Recurrent peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
Maximum RMS voltage  
Maximum DC blocking voltage  
VRMS  
VDC  
35  
50  
70  
100  
140  
200  
280  
400  
420  
600  
V
V
Maximum instantaneous forward  
VF  
0.95  
1.25  
1.85  
V
voltage@ IF=5A  
Maximum Average forward rectified  
I(AV)  
10  
A
current @ TL=100  
Peak forward surge current @8.3ms  
single half sine wave superimposed  
on rated load (JEDEC method)  
Maximum DC reverse current  
IFSM  
100  
A
VR=VRRM,TJ=25  
IR  
10  
µA  
250  
VR=VRRM,TJ=125  
Diode junction capacitance @ f=1MHz  
and applied 4V reverse voltage  
Maximum reverse recovery time@  
IF=0.5A, IR=1A, Irr=0.25A  
Typical thermal resistance, junction to  
lead  
CJ  
trr  
65  
25  
pF  
ns  
RθJC  
2.2  
/W  
Storage temperature  
Tstg  
TJ  
-55 ~ +150  
-55 ~ +150  
Operating temperature  
EF10CXXE3  
CYStek Product Specification  

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