Datasheet > EF10CXXE3

EF10CXXE3

更新时间： 2024-11-05 01:01:59

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
3页	189K
描述
10Amp. Glass Passivated Efficient Fast Recovery Rectifiers

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中文翻译

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数据手册

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EF10CXXE3 数据手册

Spec. No. : C749E3

Issued Date : 2006.07.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/3

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Features

• Fast switching for high efficiency

• Low forward voltage drop

• High current capability

• Low reverse leakage current

• High surge current capability

Mechanical Data

• Case: Molded plastic, TO-220AB

• Terminals: Solderrable per MIL-STD-202 method 208

• Epoxy: UL 94V-0 rate flame retardant

• Mounting Position: Any

• Weight: 2.24 grams

Maximum Ratings and Electrical Characteristics

(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,

resistive or inductive load. For capacitive load, derate current by 20%.)

Type

Parameter

Symbol

Units

10C01 10C02 10C03 10C05 10C06

Maximum Recurrent peak reverse

voltage

V_RRM

100

200

400

600

Maximum RMS voltage

Maximum DC blocking voltage

V_RMS

V_DC

100

140

200

280

400

420

600

Maximum instantaneous forward

V_F

0.95

1.25

1.85

voltage@ I^F=5A

Maximum Average forward rectified

I_(AV)

℃

current @ T_L=100

Peak forward surge current @8.3ms

single half sine wave superimposed

on rated load (JEDEC method)

Maximum DC reverse current

I_FSM

100

℃

V_R=V_RRM,T_J=25

I_R

µA

250

℃

V_R=V_RRM,T_J=125

Diode junction capacitance @ f=1MHz

and applied 4V reverse voltage

Maximum reverse recovery time@

I_F=0.5A, I_R=1A, Irr=0.25A

Typical thermal resistance, junction to

lead

C_J

trr

R_θJC

2.2

℃

Storage temperature

Tstg

T_J

-55 ~ +150

℃

Operating temperature

EF10CXXE3

CYStek Product Specification

12 3

中文翻译

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