Datasheet > EDS6416AHBH-TT

EDS6416AHBH-TT

更新时间： 2022-12-22 01:33:22

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
49页	647K
描述
64M bits SDRAM WTR (Wide Temperature Range)

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EDS6416AHBH-TT 数据手册

EDS6416AHBH-TT

DC Characteristics 1 (TA = –20°C to +85°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)

Parameter

Symbol

Grade

max.

Unit

Test condition

Notes

1, 2, 3

Burst length = 1

tRC = tRC (min.)

Operating current

IDD1

100

CKE = VIL,

tCK = tCK (min.)

Standby current in power down

IDD2P

Standby current in power down

(input signal stable)

IDD2PS

IDD2N

IDD2NS

IDD3P

CKE = VIL, tCK = ∞

CKE, /CS = VIH,

tCK = tCK (min.)

Standby current in non power down

(input signal stable)

CKE = VIH, tCK = ∞,

/CS = VIH

CKE = VIL,

tCK = tCK (min.)

Active standby current in power down

1, 2, 6

2, 7

1, 2, 4

2, 8

1, 2, 5

Active standby current in power down

(input signal stable)

IDD3PS

CKE = VIL, tCK = ∞

CKE, /CS = VIH,

tCK = tCK (min.)

Active standby current in non power down IDD3N

120

220

1.5

Active standby current in non power down

IDD3NS

CKE = VIH, tCK = ∞,

/CS = VIH

(input signal stable)

tCK = tCK (min.),

BL = 4

Burst operating current

Refresh current

IDD4

IDD5

IDD6

tRC = tRC (min.)

VIH ≥ VDD – 0.2V

VIL ≤ 0.2V

Self refresh current

Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output

open condition.

2. One bank operation.

3. Input signals are changed once per one clock.

4. Input signals are changed once per two clocks.

5. Input signals are changed once per four clocks.

6. After power down mode, CLK operating current.

7. After power down mode, no CLK operating current.

8. Input signals are VIH or VIL fixed.

Data Sheet E0718E20 (Ver. 2.0)

1 2 3 456 7 8...49

下载PDF

与EDS6416AHBH-TT相关器件

型号	品牌	描述	获取价格	数据表
EDS6416AHTA	ELPIDA	64M bits SDRAM (4M words x 16 bits)	获取价格
EDS6416AHTA-60-E	ELPIDA	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54	获取价格
EDS6416AHTA-60L-E	ELPIDA	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54	获取价格
EDS6416AHTA-6B-E	ELPIDA	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54	获取价格
EDS6416AHTA-6BL-E	ELPIDA	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54	获取价格
EDS6416AHTA-75-E	ELPIDA	64M bits SDRAM (4M words x 16 bits)	获取价格