Datasheet > EDS6416AHBH-TT

EDS6416AHBH-TT

更新时间： 2022-12-22 01:33:22

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
49页	647K
描述
64M bits SDRAM WTR (Wide Temperature Range)

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EDS6416AHBH-TT 数据手册

EDS6416AHBH-TT

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is

achieved (refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Note

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

–0.5 to VDD + 0.5 (≤ 4.6 (max.))

VDD

IOS

–0.5 to +4.6

1.0

Operating ambient temperature

Storage temperature

–20 to +85

–55 to +125

°C

Tstg

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (TA = –20°C to +85°C)

Parameter

Symbol

VDD, VDDQ

VSS, VSSQ

VIH

min.

3.0

max.

Unit

Notes

Supply voltage

3.6

Input high voltage

Input low voltage

2.0

–0.3

VDD + 0.3

0.8

VIL

Notes: 1. The supply voltage with all VDDand VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. VIH (max.) = VDD + 1.5V (pulse width ≤ 5ns).

4. VIL (min.) = VSS – 1.5V (pulse width ≤ 5ns).

Data Sheet E0718E20 (Ver. 2.0)

1 2 345 6 7...49

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