是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DFP |
包装说明: | CERAMIC, DFP-32 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.06 |
最长访问时间: | 20 ns | 其他特性: | TTL COMPATIBLE INPUTS/OUTPUTS; LG-MAX |
JESD-30 代码: | R-CDSO-G32 | 长度: | 21.2852 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 | 座面最大高度: | 2.9972 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.8712 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA20B32C | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20B32I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, DFP-32 | |
EDI88512CA20B32M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, DFP-32 | |
EDI88512CA20CB | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20CC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20CI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20CM | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20F32B | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20F32C | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20F32I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP32, CERAMIC, DFP-32 |