生命周期: | Obsolete | 包装说明: | DIP, |
Reach Compliance Code: | unknown | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.57 |
Is Samacsys: | N | 最长访问时间: | 20 ns |
JESD-30 代码: | R-CDIP-T32 | 长度: | 40.64 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
座面最大高度: | 3.937 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA20CC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20CI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20CM | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA20F32B | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20F32C | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20F32I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP32, CERAMIC, DFP-32 | |
EDI88512CA20F32M | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20F36B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA20F36C | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA20F36I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 |