是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DFP |
包装说明: | CERAMIC, DFP-36 | 针数: | 36 |
Reach Compliance Code: | unknown | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.28 |
最长访问时间: | 20 ns | 其他特性: | TTL COMPATIBLE INPUTS/OUTPUTS |
JESD-30 代码: | R-CDFP-F36 | 长度: | 23.368 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 36 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DFP | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 | 座面最大高度: | 3.175 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | FLAT | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 12.954 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA20F36C | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA20F36I | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA20F36M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA20KB | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA20KC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA20KI | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20KM | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA-20MBG | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36 | |
EDI88512CA20MBRP | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA20MCG | WEDC |
获取价格 |
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36 |