Datasheet > EDI88512CA-20MBG

EDI88512CA-20MBG

更新时间： 2024-11-04 05:34:23

品牌	Logo	应用领域
玛居礼 - MERCURY		静态存储器光电二极管
页数	文件大小	规格书
9页	837K
描述
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EDI88512CA-20MBG 数据手册

EDI88512CA-XMXG

WPS512K8X-XRJXG

512Kx8 Plastic Monolithic SRAM CMOS

WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to

capitalize on the cost advantage of using a plastic component while

not sacriﬁcing all of the reliability available in a full military device.

FEATURES

 512Kx8 bit CMOS Static

 Random Access Memory

Extended temperature testing is performed with the test patterns

developed for use on WEDC’s fully compliant 512Kx8 SRAMs.

WEDC fully characterizes devices to determine the proper test

patterns for testing at temperature extremes. This is critical because

the operating characteristics of device change when it is operated

beyond the commercial guarantee a device that operates reliably

in the ﬁeld at temperature extremes. Users of WEDC’s ruggedized

plastic beneﬁt from WEDC’s extensive experience in characterizing

SRAMs for use in military systems.

• Access Times of 17, 20, 25ns

• Data Retention Function (LPA version)

• Extended Temperature Testing

• Data Retention Functionality Testing

 36 lead JEDEC Approved Revolutionary Pinout

• Plastic SOJ (Package 319)

 Single +5V (±10%) Supply Operation

 RoHS compliant

WEDC ensures Low Power devices will retain data in Data

Retention mode by characterizing the devices to determine the

appropriate test conditions. This is crucial for systems operating

at -40°C or below and using dense memories such as 512Kx8s.

WEDC’s ruggedized plastic SOJ is footprint compatible with

WEDC’s full military ceramic 36 pin SOJ.

FIGURE 1 – PIN CONFIGURATION

TOP VIEW

PIN Description

I/O0-7

A^0-18

WE#

CS#

OE#

V^CC

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

36 NC

35 A18

34 A17

33 A16

32 A15

31 OE#

30 I/O7

29 I/O6

28 V_SS

27 V_CC

26 I/O5

25 I/O4

24 A14

23 A13

22 A12

21 A11

20 A10

19 NC

Output Enable

Power (+5V ±10%)

Ground

VSS

Not Connected

CS#

I/O0

I/O1

V_CC

BLOCK DIAGRAM

36pin

V_SS10

I/O2 11

I/O3 12

WE# 13

A5 14

Revolutionary

Memory Array

A6 15

A7 16

Address

Buffer

Address

Decoder

I/O

Circuits

AØ-18

I/OØ-7

A8 17

A9 18

WE#

CS#

OE#

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 11

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

12 3 4 5 6 7...9

中文翻译

下载PDF

与EDI88512CA-20MBG相关器件

型号	品牌	获取价格	描述	数据表
EDI88512CA20MBRP	ETC	获取价格	x8 SRAM
EDI88512CA20MCG	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36
EDI88512CA-20MCG	MERCURY	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36
EDI88512CA20MCRP	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36,
EDI88512CA20MI	ETC	获取价格	x8 SRAM
EDI88512CA20MIG	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36
EDI88512CA20MIRP	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36,
EDI88512CA20MM	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, PLASTIC, SOJ-36
EDI88512CA20MMG	WEDC	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36
EDI88512CA-20MMG	MICROSEMI	获取价格	512KX8 STANDARD SRAM, 20ns, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36

与EDI88512CA-20MBG相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

10
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

4
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

26
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

25

产品中心

服务支持

精选活动

关于我们

帮助中心

EDI88512CA-20MBG

EDI88512CA-20MBG 数据手册

与EDI88512CA-20MBG相关器件

与EDI88512CA-20MBG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EDI88512CA-20MBG

EDI88512CA-20MBG 数据手册

与EDI88512CA-20MBG相关器件

与EDI88512CA-20MBG相关文章

您还可以找

您在本页遇到什么问题？