Datasheet > EDI416S4030A

EDI416S4030A

更新时间： 2024-09-20 03:06:39

品牌	Logo	应用领域
WEDC		动态存储器
页数	文件大小	规格书
27页	1123K
描述
1Mx16 Bits x 4 Banks Synchronous DRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EDI416S4030A 数据手册

EDI416S4030A

White Electronic Designs

1Mx16 Bits x 4 Banks Synchronous DRAM

FEATURES

DESCRIPTION

The EDI416S4030Ais 67,108,864 bits of synchronous high

data rate DRAM organized as 4 x 1,048,576 words x 16 bits.

Synchronous design allows precise cycle control with the

use of system clock, I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high

performance memory system applications.



Single 3.3V power supply

Fully Synchronous to positive Clock Edge

Clock Frequency = 100, 83MHz

SDRAM CAS Latentency = 3 (100MHz), 2

(83MHz)



Burst Operation

 Sequential or Interleave

Available in a 54 pin TSOP type II package the

EDI416S4030A is tested over the industrial temp range (-

40C to +85C) providing a solution for rugged main memory

applications.

 Burst length = programmable 1,2,4,8 or full page

 Burst Read and Write

 Multiple Burst Read and Single Write

DATA Mask Control per byte



Auto Refresh (CBR) and Self Refresh

 4096 refresh cycles across 64ms

Automatic and Controlled Precharge Commands

Suspend Mode and Power Down Mode

Industrial Temperature Range



FIG. 1

PIN CONFIGURATIONS

PIN DESCRIPTION

VCC

DQ0

VCCQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VCCQ

DQ5

DQ6

VSSQ

DQ7

VCC

VSS

DQ15

VSSQ

DQ14

DQ13

VCCQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VCCQ

DQ8

VSS

A0-11

BA0, BA1

CE#

Address Inputs

Bank Select Address

Chip Select

WE#

Write Enable

Clock Input

CKE

Clock Enable

DQ0-15

L(U)DQM

RAS#

CAS#

Data Input/Output

Data Input/Output Mask

Row Address Strobe

Column Address Strobe

Power (+3.3V ±10%)

Data Output Power

Ground

LDQM

WE#

CAS#

RAS#

CE#

BA0

NC/RFU

UDQM

CCQ

CKE

A11

SSQ

Data Output Ground

No Connection

BA1

A10/AP

VCC

VSS

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

January, 2003

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

Rev. 2

12 3 4 5 6 7...27

中文翻译

下载PDF

与EDI416S4030A相关器件

型号	品牌	获取价格	描述	数据表
EDI416S4030A10SI	WEDC	获取价格	1Mx16 Bits x 4 Banks Synchronous DRAM
EDI416S4030A12SI	WEDC	获取价格	1Mx16 Bits x 4 Banks Synchronous DRAM
EDI416S4030A-SI	ETC	获取价格	Industrial SDRAM
EDI441024C100BB	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100BC	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100BI	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100BM	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100FB	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100FC	ETC	获取价格	x4 Fast Page Mode DRAM
EDI441024C100FI	ETC	获取价格	x4 Fast Page Mode DRAM