Datasheet > EDI4161MEV70SI

EDI4161MEV70SI

更新时间： 2024-11-07 23:50:03

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
12页	210K
描述
x16 EDO Page Mode DRAM

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中文翻译

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数据手册

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EDI4161MEV70SI 数据手册

EDI4161MEV-RP

1Meg x16 EDO DRAM

1 Megabit x 16 Dynamic RAM

3.3V, Extended Data Out

Features

EDI's ruggedized plastic 1Mx16 DRAM allows the user to

capitalize on the cost advantage of using a plastic compo-

nentwhilenotsacrificingallofthereliabilityavailableinafull

military device.

1 Meg x 16 bit CMOS Dynamic

Random Access Memory

• Access Times: 60 and 70ns

Extended temperature testing is performed with the test

patternsdevelopedforuseonEDI'sfullycompliantDRAMs.

EDIfullycharacterizes devices todeterminethepropertest

patterns for testing at temperature extremes. This is critical

because the operating characteristics of device change

when it is operated beyond the commercial temperature

range. Using commercial test methods will not guarantee a

device that operates reliably in the field at temperature

extremes. Users of EDI's ruggedized plastic benefit from

EDI'sextensiveexperienceincharacterizingDRAMsforuse

inmilitarysystems.

•

EDO Cycle time 25 and 30ns

• Single +3.3V (±10%) Supply Operation

• 1024 cycles/16ms Refresh

• RAS-Only,CAS-BEFORE-RAS,and

HIDDEN refresh capability

• Low Operating Power Dissipation

• Low Standby Power

• Common I/O

• All Inputs/Outputs TTL Compatible

Package Style

The x16 width of the memory allows the user to build a cost

effective x64 wide main memory array for the Power PC

microprocessor. The wider memory width provides for a

higher memory bandwidth required by today's systems.

• 44/50 pin Plastic TSOP

• 42 pin Plastic SOJ

Pin Configurations

Pin Names

VCC

DQ1

DQ2

DQ3

DQ4

VCC

DQ5

DQ6

DQ7

DQ8

VSS

VCC

DQ1

DQ2

DQ3

DQ4

VCC

DQ5

DQ6

DQ7

DQ8

VSS

DQ16

DQ15

DQ14

DQ13

VSS

DQ12

DQ11

DQ10

DQ9

DQ16

DQ15

DQ14

DQ13

VSS

AØ-A9

CASL\ and CASH\

RAS\

DQ1-DQ16

VCC

VSS

AddressInputs

ColumnAddressStrobe

RowAddressStrobe

WriteControlInput

OutputEnable

DataInputs/Outputs

Power (+5V±10%)

Ground

DQ12

DQ11

DQ10

DQ9

42 pin

44/50 pin

CASL\

CASH\

RAS\

CASL\

CASH\

RAS\

VSS

NoConnection

VSS

VCC

Electronic Designs Incorporated

• One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX 508-836-4850 •

http://www.electronic-designs.com

EDI4161MEV-RP Rev. 1 4/98 ECO#10179

12 3 4 5 6 7...12

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与EDI4161MEV70SI相关器件

型号	品牌	获取价格	描述	数据表
EDI4161MEV-70SI	WEDC	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44,
EDI4161MEV70SM	WEDC	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44,
EDI4164MEV50SI	ETC	获取价格	x16 EDO Page Mode DRAM
EDI4164MEV50SM	ETC	获取价格	x16 EDO Page Mode DRAM
EDI4164MEV60SI	ETC	获取价格	x16 EDO Page Mode DRAM
EDI4164MEV60SM	ETC	获取价格	x16 EDO Page Mode DRAM
EDI4164MEV70SI	ETC	获取价格	x16 EDO Page Mode DRAM
EDI4164MEV70SM	ETC	获取价格	x16 EDO Page Mode DRAM
EDI416S4030A	WEDC	获取价格	1Mx16 Bits x 4 Banks Synchronous DRAM
EDI416S4030A10SI	WEDC	获取价格	1Mx16 Bits x 4 Banks Synchronous DRAM

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