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EDF1CM/45-E3 PDF预览

EDF1CM/45-E3

更新时间： 2024-11-06 04:21:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 21K
描述
DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode

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EDF1CM/45-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：PLASTIC, CASE DFM, 4 PIN
针数：4Reach Compliance Code：unknown
风险等级：5.82

EDF1CM/45-E3 数据手册

 浏览型号EDF1CM/45-E3的Datasheet PDF文件第2页 
EDF1AM thru EDF1DM  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Glass Passivated  
Ultrafast Bridge Rectifier  
Reverse Voltage 50 and 200V  
Forward Current 1.0A  
Case Style DFM  
Features  
• Plastic package used has Underwriters Laboratory  
Flammability Classification 94V-0  
• This series is UL listed under Recognized Component  
Index, file number E54214  
0.315 (8.00)  
0.255 (6.5)  
0.245 (6.2) 0.285 (7.24)  
• Glass passivated chip junction  
• High forward surge current capability  
• Ideal for printed circuit boards  
• Superfast recovery times for high efficiency  
• High temperature soldering guaranteed:  
260°C/10 seconds, at 5 lbs. (2.3kg) tension  
0.335 (8.51)  
0.320 (8.12)  
0.130 (3.3)  
0.120 (3.05)  
0.080 (2.03)  
0.050 (1.27)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
0.045 (1.14)  
0.035 (0.89)  
0.013 (3.3)  
0.185 (4.69)  
0.150 (3.81)  
0.0086 (0.22)  
0.023 (0.58)  
0.018 (0.46)  
Terminals: Plated leads solderable per MIL-STD-750,  
0.350 (8.9)  
0.300 (7.6)  
0.075 (1.90)  
0.055 (1.39)  
Method 2026  
0.205 (5.2)  
0.195 (5.0)  
Polarity: Polarity symbols as marked on body  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight: 0.014 oz., 0.4 g  
Packaging codes/options:  
45/50 ea. per Bulk Tube  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol EDF1AM EDF1BM EDF1CM EDF1DM  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
106  
150  
200  
140  
200  
V
V
Maximum DC blocking voltage  
100  
V
Maximum average forward output  
rectified current at TA = 40°C  
IF(AV)  
1.0  
A
Peak forward surge current single half sine-wave super-  
imposed on rated load (JEDEC Method) TJ = 150°C  
IFSM  
I2t  
50  
10  
A
Rating for fusing (t < 8.3ms)  
A2sec  
°C/W  
°C  
Typical thermal resistance per leg (Note 1)  
RθJA  
RθJL  
38  
12  
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol EDF1AM EDF1BM EDF1CM EDF1DM  
Unit  
Max. instantaneous forward voltage drop per leg at 1.0A  
VF  
1.05  
V
Maximum reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
5.0  
1.0  
µA  
mA  
IR  
Maximum reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
trr  
50  
ns  
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.51 x 0.51" (13 x 13mm) copper pads  
Document Number 88577  
18-Mar-02  
www.vishay.com  
1
12

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 		暂无描述
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 		DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFM
EDF1CM-E3/45 VISHAY

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 		Diode Rectifier Bridge Single 150V 1A 4-Pin Case DFM T/R
EDF1CM-E3/50 VISHAY

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 		DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier D
EDF1CM-E3/51 VISHAY

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 		DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectif
EDF1CM-E3/72 VISHAY

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 		DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectif

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