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EDF1AM/72-E3 PDF预览

EDF1AM/72-E3

更新时间： 2024-11-09 09:32:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
2页 21K
描述
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode

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中文翻译

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EDF1AM/72-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PDIP-T4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.45其他特性：UL RECOGNIZED
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODEJESD-30 代码：R-PDIP-T4
JESD-609代码：e3最大非重复峰值正向电流：50 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT APPLICABLE
认证状态：Not Qualified最大重复峰值反向电压：50 V
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：DUAL
处于峰值回流温度下的最长时间：NOT APPLICABLE

EDF1AM/72-E3 数据手册

 浏览型号EDF1AM/72-E3的Datasheet PDF文件第2页 
EDF1AM thru EDF1DM  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature Glass Passivated  
Ultrafast Bridge Rectifier  
Reverse Voltage 50 and 200V  
Forward Current 1.0A  
Case Style DFM  
Features  
• Plastic package used has Underwriters Laboratory  
Flammability Classification 94V-0  
• This series is UL listed under Recognized Component  
Index, file number E54214  
0.315 (8.00)  
0.255 (6.5)  
0.245 (6.2) 0.285 (7.24)  
• Glass passivated chip junction  
• High forward surge current capability  
• Ideal for printed circuit boards  
• Superfast recovery times for high efficiency  
• High temperature soldering guaranteed:  
260°C/10 seconds, at 5 lbs. (2.3kg) tension  
0.335 (8.51)  
0.320 (8.12)  
0.130 (3.3)  
0.120 (3.05)  
0.080 (2.03)  
0.050 (1.27)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
0.045 (1.14)  
0.035 (0.89)  
0.013 (3.3)  
0.185 (4.69)  
0.150 (3.81)  
0.0086 (0.22)  
0.023 (0.58)  
0.018 (0.46)  
Terminals: Plated leads solderable per MIL-STD-750,  
0.350 (8.9)  
0.300 (7.6)  
0.075 (1.90)  
0.055 (1.39)  
Method 2026  
0.205 (5.2)  
0.195 (5.0)  
Polarity: Polarity symbols as marked on body  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight: 0.014 oz., 0.4 g  
Packaging codes/options:  
45/50 ea. per Bulk Tube  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol EDF1AM EDF1BM EDF1CM EDF1DM  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
106  
150  
200  
140  
200  
V
V
Maximum DC blocking voltage  
100  
V
Maximum average forward output  
rectified current at TA = 40°C  
IF(AV)  
1.0  
A
Peak forward surge current single half sine-wave super-  
imposed on rated load (JEDEC Method) TJ = 150°C  
IFSM  
I2t  
50  
10  
A
Rating for fusing (t < 8.3ms)  
A2sec  
°C/W  
°C  
Typical thermal resistance per leg (Note 1)  
RθJA  
RθJL  
38  
12  
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol EDF1AM EDF1BM EDF1CM EDF1DM  
Unit  
Max. instantaneous forward voltage drop per leg at 1.0A  
VF  
1.05  
V
Maximum reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
5.0  
1.0  
µA  
mA  
IR  
Maximum reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
trr  
50  
ns  
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.51 x 0.51" (13 x 13mm) copper pads  
Document Number 88577  
18-Mar-02  
www.vishay.com  
1
12

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