Datasheet > EDF1AS_16

EDF1AS_16

更新时间： 2024-11-09 01:24:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	86K
描述
Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers

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中文翻译

获取价格

数据手册

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EDF1AS_16 数据手册

EDF1AS, EDF1BS, EDF1CS, EDF1DS

www.vishay.com

Vishay General Semiconductor

Miniature Glass Passivated Ultrafast

Surface Mount Bridge Rectifiers

FEATURES

• UL recognition, file number E54214

• Ideal for automated placement

• Glass passivated pellet chip junction

• Ultrafast reverse recovery time for high

frequency

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Case Style DFS

General purpose use in AC/DC bridge full wave rectification

for SMPS, lighting ballaster, adapter, battery charger, home

appliances, office equipment, and telecommunication

applications.

PRIMARY CHARACTERISTICS

Package

DFS

1 A

I_F(AV)

MECHANICAL DATA

V_RRM

50 V, 100 V, 150 V, 200 V

Case: DFS

I_FSM

I_R

50 A

5 μA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_Fat I_F= 1.0 A

t_rr

1.05 V

50 ns

150 °C

Quad

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Diode variations

Polarity: As marked on body

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

106

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward output rectified current at T_A= 40 °C ⁽¹⁾

Peak forward surge current single half sine-wave superimposed on rated load

Rating for fusing (t < 8.3 ms)

I_F(AV)

1.0

I_FSM

I²t

A²s

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Note

(1)

Pulse test: 300 ms pulse width, 1 % duty cycle

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT

Maximum instantaneous forward voltage

drop per diode

1.0 A ⁽¹⁾

V_F

1.05

T_A= 25 °C

5.0

1.0

μA

Maximum DC reverse current at rated DC

blocking voltage per diode

I_R

t_rr

T_A= 125 °C

Maximum reverse recovery time per diode I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

Note

(1)

Pulse test: 300 ms pulse width, 1 % duty cycle

Revision: 25-Feb-16

Document Number: 88578

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与EDF1AS_16相关器件

型号	品牌	获取价格	描述	数据表
EDF1ASE3	VISHAY	获取价格	DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS,
EDF1AS-E3	VISHAY	获取价格	DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS,
EDF1AS-E3/45	VISHAY	获取价格	Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFS Tube
EDF1AS-E3/77	VISHAY	获取价格	Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFS T/R
EDF1ASE377	VISHAY	获取价格	Miniature Glass Passivated Ultrafast
EDF1BM	VISHAY	获取价格	MINIATURE GLASS PASSIVATED FAST EFFICIENT BRIDGE RECTIFIER
EDF1BM/45	VISHAY	获取价格	Bridge Rectifier Diode, 1A, 100V V(RRM),
EDF1BM/45-E3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectif
EDF1BM/50	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DFM, 4 PIN
EDF1BM/50-E3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier D

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