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EDF1BM-E3/45 PDF预览

EDF1BM-E3/45

更新时间: 2024-11-05 22:59:23
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 83K
描述
DIODE GPP 1A 100V 50NS 4DIP

EDF1BM-E3/45 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDIP-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.29
其他特性:UL RECOGNIZED最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.05 V
JESD-30 代码:R-PDIP-T4JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT APPLICABLE

EDF1BM-E3/45 数据手册

 浏览型号EDF1BM-E3/45的Datasheet PDF文件第2页浏览型号EDF1BM-E3/45的Datasheet PDF文件第3页浏览型号EDF1BM-E3/45的Datasheet PDF文件第4页浏览型号EDF1BM-E3/45的Datasheet PDF文件第5页 
EDF1AM, EDF1BM, EDF1CM, EDF1DM  
www.vishay.com  
Vishay General Semiconductor  
Miniature Glass Passivated Ultrafast Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
• Ultrafast reverse recovery time for high  
frequency  
• Applicable for automated insertion  
~
• High surge current capability  
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
~
General purpose use in AC/DC bridge full wave rectification  
for SMPS, lighting ballaster, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Case Style DFM  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
MECHANICAL DATA  
3D Models  
Case: DFM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
PRIMARY CHARACTERISTICS  
IF(AV)  
1 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VRRM  
50 V, 100 V, 150 V, 200 V  
IFSM  
50 A  
5 μA  
IR  
VF at IF = 1.0 A  
trr  
Polarity: as marked on body  
1.05 V  
50 ns  
150 °C  
DFM  
TJ max.  
Package  
Circuit configuration  
Quad  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
EDF1AM  
EDF1BM EDF1CM EDF1DM  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
106  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward output rectified current at TA = 40 °C  
IF(AV)  
1.0  
50  
10  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 03-Sep-2020  
Document Number: 88577  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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