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EDF1AM_13

更新时间： 2024-11-11 01:24:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 79K
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Miniature Glass Passivated Ultrafast Bridge Rectifier

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EDF1AM_13 数据手册

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EDF1AM, EDF1BM, EDF1CM, EDF1DM  
www.vishay.com  
Vishay General Semiconductor  
Miniature Glass Passivated Ultrafast Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
• Ultrafast reverse recovery time for high  
frequency  
• Applicable for automative insertion  
~
• High surge current capability  
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
~
General purpose use in AC/DC bridge full wave rectification  
for SMPS, lighting ballaster, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Case Style DFM  
PRIMARY CHARACTERISTICS  
Package  
DFM  
1 A  
MECHANICAL DATA  
IF(AV)  
Case: DFM  
VRRM  
50 V, 100 V, 150 V, 200 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IFSM  
IR  
50 A  
5 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 1.0 A  
trr  
1.05 V  
50 ns  
150 °C  
Quad  
TJ max.  
Polarity: As marked on body  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
EDF1AM  
EDF1BM EDF1CM EDF1DM  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
106  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward output rectified current at TA = 40 °C  
IF(AV)  
1.0  
50  
10  
Peak forward surge current single sine-wave superimposed on  
rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
EDF1AM  
EDF1BM EDF1CM EDF1DM  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
1.0 A  
VF  
1.05  
V
TA = 25 °C  
5.0  
1.0  
μA  
Maximum reverse current at rated DC  
blocking voltage per diode  
IR  
trr  
TA = 125 °C  
mA  
Maximum reverse recovery time per  
diode  
IF = 0.5 A, IR = 1.0 A,  
50  
ns  
Irr = 0.25 A  
Revision: 16-Aug-13  
Document Number: 88577  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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