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EDC4BV7242-60JG-S PDF预览

EDC4BV7242-60JG-S

更新时间: 2024-11-11 19:46:55
品牌 Logo 应用领域
富士通 - FUJITSU 光电二极管
页数 文件大小 规格书
8页 134K
描述
Memory IC, 4MX72, CMOS, PDMA168

EDC4BV7242-60JG-S 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:60 nsI/O 类型:COMMON
JESD-30 代码:R-PDMA-N168内存密度:301989888 bit
内存宽度:72端子数量:168
字数:4194304 words字数代码:4000000
最高工作温度:70 °C最低工作温度:
组织:4MX72输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIMM
封装等效代码:DIMM168封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:3.3 V
认证状态:Not Qualified刷新周期:2048
座面最大高度:25.4 mm自我刷新:NO
最大待机电流:0.028 A子类别:Other Memory ICs
最大压摆率:1.99 mA标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

EDC4BV7242-60JG-S 数据手册

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November 1996  
Revision 1.0  
DATA SHEET  
EDC4BV724(2/4)-(60/70)(J/T)G-S  
32MByte (4M x 72) CMOS  
EDO DRAM Module - 3.3V (ECC), Buffered  
General Description  
The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module  
organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.  
The module utilizes eighteen, Fujitsu MB81V1(7/6)405A-(60/70)(PJ/FN) CMOS 4Mx4 EDO dynamic RAMs in a surface mount  
package on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.  
Control lines provided are such that Dword control is possible. All signals are buffered (74ABT16244 or equivalent) except RAS,  
data and IDs.  
Features  
• High Density: 32MByte  
• Fast Access Time of 60/70 ns (max.)  
• Low Power:  
7.2/6.2 W (max.) - Active (60-70ns): 2KR  
5.4/4.8 W (max.) -Active (60/70 ns): 4KR  
360mW (max.) - Standby (LVTTL)  
296mW (max.) - Standby (CMOS)  
• LVTTL-compatible inputs and outputs  
• Separate power and ground planes to improve noise immunity  
• Single power supply of 3.3V±0.3V  
• Height: 1.00 inch  
• 2K/4K Refresh Cycles  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Ratings  
-0.5 to +4.6  
22  
Unit  
V
Voltage on any pin relative to V  
V
P
SS  
T
Power Dissipation  
W
T
T
Operating Temperature  
Storage Temperate  
0 to +70  
-55 to +125  
-50 to +50  
°C  
°C  
mA  
opr  
T
stg  
OS  
I
Short Circuit Output Current  
RECOMMENDED DC OPERATING CONDITIONS  
(TA = 0 to +70 °C)  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
Max  
3.6  
0
Unit  
V
V
V
V
3.0  
0
3.3  
V
V
V
V
CC  
SS  
IH  
Ground  
0
-
V
+0.3  
Input High voltage  
Input Low voltage  
2.0  
-0.3  
CC  
-
0.8  
IL  
Fujitsu Microelectronics, Inc.  
1

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