Datasheet > EDC-660-19-01

EDC-660-19-01

更新时间： 2024-11-11 06:55:55

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	19K
描述
7-Segment LED-Chip

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中文翻译

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数据手册

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EDC-660-19-01 数据手册

7-Segment LED-Chip

EDC-660-19-01

Preliminary

6/22/2007

Technology

rev. 05/07

Type

Electrodes

Radiation

Red

Diffusion type

GaAsP/GaAs

P (anode) up

1000

425

typ. dimensions (µm)

typ. thickness

330 µm

Application

This miniature device is an

excellent choice for

cathode

applications where small

size and reduced space

are important factors such

as complex displays in

optical devices for

laboratory, measurement,

control- and medical

equipment.

Au-alloy metalization

anode

Al metalization

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

T_a= -40..120°C

Symbol

Value

Unit

Temperature coefficient of λ_C

Operating temperature range

Storage temperature range

T_C(λ_C)

T_amb

T_stg

0.15

nm/K

°C

-30 to +100

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

Min

Typ

Max

Unit

conditions¹

V_F

V_R

I_v

I_F= 5 mA

I_F= 20 mA

I_R= 100 µA

I_F= 5 mA

Forward voltage

Reverse voltage

Luminous intensity/segment²

Luminous intensity/segment³

I_Vratio segment to segment²

I_Vratio to adjacent chip

1.7

1.8

1.9

2.1

µcd

I_v

I_F= 20 mA

280

400

710

I_v

1.75

2.00

670

λ_p

Peak wavelength

650

660

∆λ_0.5

Spectral bandwidth at 50%

¹Current for one segment

²Measured on bare chip on TO-18 header

³Measured on epoxy covered chip on TO-18 header

Labeling

I_V(typ) [µcd]

V_F(typ) [V]

Lot N°

Quantity

Type

EDC-660-19-01

Packing: Chips in wafer pack or on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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