Datasheet > EDC-660-19-02

EDC-660-19-02

更新时间： 2024-11-11 06:55:55

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	19K
描述
7-Segment LED-Chip

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数据手册

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EDC-660-19-02 数据手册

7-Segment LED-Chip

EDC-660-19-02

Preliminary

6/22/2007

Technology

rev. 05/07

Type

Electrodes

Radiation

Red

Diffusion type

GaAsP/GaAs

P (anode) up

typ. dimensions (µm)

690

275

typ. thickness

330 µm

Application

This miniature device is an

excellent choice for

cathode

applications where small

size and reduced space

are important factors such

as complex displays in

optical devices for

laboratory, measurement,

control- and medical

equipment.

Au-alloy metalization

anode

Al metalization

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Temperature coefficient of λ_C

Operating temperature range

Storage temperature range

Test сonditions

T_a= -40..120°C

Symbol

Value

0.15

Unit

T_C(λ_C)

T_amb

T_stg

nm/K

°C

-40 to +120

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

Min

Typ

Max

2.0

Unit

conditions¹

I_F= 5 mA

I_R= 10 µA

I_F= 5 mA

V_F

V_R

I_v

Forward voltage

Reverse voltage

1.75

Luminous intensity/segment²

I_Vratio segment to segment²

I_Vratio to adjacent chip

µcd

1.75

2.00

665

λ_p

Peak wavelength

645

655

∆λ_0.5

Spectral bandwidth at 50%

¹Current for one segment

²Measured on bare chip on TO-18 header

Labeling

I_v(typ) [µcd]

V_F(typ) [V]

Lot N°

Quantity

Type

EDC-660-19-02

Packing: Chips in wafer pack or on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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