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EBE10UE8AEFB-6E-F PDF预览

EBE10UE8AEFB-6E-F

更新时间: 2024-01-27 22:31:49
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
30页 229K
描述
1GB Unbuffered DDR2 SDRAM DIMM

EBE10UE8AEFB-6E-F 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:240
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.84
Is Samacsys:N访问模式:SINGLE BANK PAGE BURST
最长访问时间:0.45 ns其他特性:AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
JESD-30 代码:R-XDMA-N240长度:133.35 mm
内存密度:1073741824 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:8功能数量:1
端口数量:1端子数量:240
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX8
封装主体材料:UNSPECIFIED封装代码:DIMM
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
认证状态:Not Qualified座面最大高度:30 mm
自我刷新:YES最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
宽度:3.18 mmBase Number Matches:1

EBE10UE8AEFB-6E-F 数据手册

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EBE10UE8AEFB  
Electrical Specifications  
All voltages are referenced to VSS (GND).  
Absolute Maximum Ratings  
Parameter  
Symbol  
VT  
Value  
Unit  
Notes  
1
Voltage on any pin relative to VSS  
Supply voltage relative to VSS  
Short circuit output current  
Power dissipation  
–0.5 to +2.3  
–0.5 to +2.3  
50  
V
VDD  
IOS  
PD  
V
mA  
W
°C  
°C  
1
8
Operating case temperature  
Storage temperature  
TC  
0 to +95  
–55 to +100  
1, 2  
1
Tstg  
Notes: 1. DDR2 SDRAM component specification.  
2. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in  
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature self-refresh entry via the control of  
EMRS (2) bit A7 is required.  
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause  
permanent damage. The device is not meant to be operated under conditions outside the limits  
described in the operational section of this specification Exposure to Absolute Maximum Rating  
conditions for extended periods may affect device reliability.  
DC Operating Conditions (TC = 0°C to +85°C) (DDR2 SDRAM Component Specification)  
Parameter  
Symbol  
VDD, VDDQ  
VSS  
min.  
typ.  
1.8  
0
max.  
1.9  
0
Unit  
V
Notes  
4
Supply voltage  
1.7  
0
V
VDDSPD  
VREF  
1.7  
3.6  
V
Input reference voltage  
Termination voltage  
DC input logic high  
DC input low  
0.49 × VDDQ  
VREF 0.04  
VREF + 0.125  
0.3  
0.50 × VDDQ 0.51 × VDDQ  
V
1, 2  
3
VTT  
VREF  
VREF + 0.04  
VDDQ + 0.3  
VREF – 0.125  
V
VIH (DC)  
VIL (DC)  
VIH (AC)  
VIL (AC)  
V
V
AC input logic high  
AC input low  
VREF + 0.200  
V
VREF – 0.200  
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system.  
Typically the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are  
expected to track variations in VDDQ.  
2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC).  
3. VTT of transmitting device must track VREF of receiving device.  
4. VDDQ must be equal to VDD.  
Preliminary Data Sheet E1402E10 (Ver. 1.0)  
10  

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