EBE10UE8AFFA PDF预览

EBE10UE8AFFA

更新时间: 2025-08-08 06:55:27
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
30页 222K
描述
1GB Unbuffered DDR2 SDRAM DIMM

EBE10UE8AFFA 数据手册

 浏览型号EBE10UE8AFFA的Datasheet PDF文件第2页浏览型号EBE10UE8AFFA的Datasheet PDF文件第3页浏览型号EBE10UE8AFFA的Datasheet PDF文件第4页浏览型号EBE10UE8AFFA的Datasheet PDF文件第5页浏览型号EBE10UE8AFFA的Datasheet PDF文件第6页浏览型号EBE10UE8AFFA的Datasheet PDF文件第7页 
DATA SHEET  
1GB Unbuffered DDR2 SDRAM DIMM  
EBE10UE8AFFA (128M words × 64 bits, 1 Rank)  
Specifications  
Features  
Density: 1GB  
Organization  
128M words × 64 bits, 1 rank  
Mounting 8 pieces of 1G bits DDR2 SDRAM sealed  
in FBGA  
Double-data-rate architecture; two data transfers per  
clock cycle  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Lead-free (RoHS compliant) and Halogen-free  
Power supply: VDD = 1.8V 0.1V  
Data rate: 800Mbps/667Mbps (max.)  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5, 6  
Precharge: auto precharge option for each burst  
access  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
operation  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E1457E20 (Ver. 2.0)  
Date Published April 2009 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2009  

与EBE10UE8AFFA相关器件

型号 品牌 获取价格 描述 数据表
EBE10UE8AFFA-6E-F ELPIDA

获取价格

1GB Unbuffered DDR2 SDRAM DIMM
EBE10UE8AFFA-8G-F ELPIDA

获取价格

1GB Unbuffered DDR2 SDRAM DIMM
EBE10UE8AFSA ELPIDA

获取价格

1GB DDR2 SDRAM SO-DIMM
EBE10UE8AFSA-6E-F ELPIDA

获取价格

1GB DDR2 SDRAM SO-DIMM
EBE10UE8AFSA-8G-F ELPIDA

获取价格

1GB DDR2 SDRAM SO-DIMM
EBE11ED8ABFA ELPIDA

获取价格

1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8ABFA-4A ELPIDA

获取价格

DDR DRAM Module, 128MX72, 0.6ns, CMOS, DIMM-240
EBE11ED8ABFA-4A-E ELPIDA

获取价格

1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
EBE11ED8ABFA-4C ELPIDA

获取价格

DDR DRAM Module, 128MX72, 0.6ns, CMOS, DIMM-240
EBE11ED8ABFA-4C-E ELPIDA

获取价格

DDR DRAM Module, 128MX72, 0.6ns, CMOS, LEAD FREE, DIMM-240