EA30QS03L-F

更新时间： 2024-11-09 23:13:19

品牌	Logo	应用领域
NIEC		肖特基二极管瞄准线
页数	文件大小	规格书
6页	58K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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EA30QS03L-F 数据手册

SBD Type : EA30QS03L-F

OUTLINE DRAWING

FEATURES

* TO-252AA Case, Surface Mounting Device

* Extremely Low Forward Voltage drop

* Low Power Loss, High Efficiency

* High Surge Capability

* Packaged in 16mm Tape and Reel

Maximum Ratings

Approx Net Weight:0.30g

EA30QS03L-F

Symbol

V_RRM

Unit

Rating

Repetitive Peak Reverse Voltage

Average Rectified

Output Current

1.7

3.0

Ta=32°C *1 50Hz Half Sine Wave

I_O

Resistive Load

Tc=126°C

RMS Forward Current

I_F(RMS)

I_FSM

4.71

50Hz Half Sine Wave,1cycle,

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Tjw

Tstg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Symbol

I_RM

V_FMTj=25°C,I_FM= 3 A

Rth(j-a) P.C.Board mounted *1

Rth(j-c)

Conditions

Tj=25°C,V_RM=V_RRM

Min Typ Max Unit

3.0

0.45

Thermal

Resistance

Junction to Ambient

Junction to Case

80 °C/W

°C/W

*1: P.C.Board mounted, Print Land = 20x20 mm

12 3 4 5 6

中文翻译

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EA30QS04	NIEC	获取价格	SBD
EA30QS04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
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EA30QS04-F	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
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EA30QS06-F	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
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