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E28F200CV-T80 PDF预览

E28F200CV-T80

更新时间: 2024-02-06 11:35:41
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
55页 629K
描述
2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

E28F200CV-T80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88最长访问时间:150 ns
其他特性:CAN BE OPERATED IN 4.5V TO 5.5V; CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:NO耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3.3/5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:16K,8K,96K,128K最大待机电流:0.000008 A
子类别:Flash Memories最大压摆率:0.065 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:MOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:12 mm

E28F200CV-T80 数据手册

 浏览型号E28F200CV-T80的Datasheet PDF文件第2页浏览型号E28F200CV-T80的Datasheet PDF文件第3页浏览型号E28F200CV-T80的Datasheet PDF文件第4页浏览型号E28F200CV-T80的Datasheet PDF文件第5页浏览型号E28F200CV-T80的Datasheet PDF文件第6页浏览型号E28F200CV-T80的Datasheet PDF文件第7页 
SEE NEW DESIGN RECOMMENDATIONS  
E
REFERENCE ONLY  
2-MBIT SmartVoltage BOOT BLOCK  
FLASH MEMORY FAMILY  
28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B  
Intel SmartVoltage Technology  
5 V or 12 V Program/Erase  
Extended Block Erase Cycling  
100,000 Cycles at Commercial Temp  
10,000 Cycles at Extended Temp  
3.3 V or 5 V Read Operation  
Very High-Performance Read  
5 V: 60 ns Access Time  
Automated Word/Byte Program and  
Block Erase  
3 V: 110 ns Access Time  
Command User Interface  
Status Registers  
Erase Suspend Capability  
Low Power Consumption  
Max 60 mA Read Current at 5 V  
Max 30 mA Read Current at  
3.3 V–3.6 V  
SRAM-Compatible Write Interface  
Automatic Power Savings Feature  
x8/x16-Selectable Input/Output Bus  
28F200 for High Performance 16- or  
32-bit CPUs  
Reset/Deep Power-Down Input  
0.2 µA ICCTypical  
Provides Reset for Boot Operations  
x8-Only Input/Output Architecture  
28F002B for Space-Constrained  
8-bit Applications  
Hardware Data Protection Feature  
Absolute Hardware-Protection for  
Boot Block  
Optimized Array Blocking Architecture  
One 16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
Write Lockout during Power  
Transitions  
Industry-Standard Surface Mount  
Packaging  
96-KB and 128-KB Main Blocks  
Top or Bottom Boot Locations  
40-, 48-, 56-Lead TSOP  
44-Lead PSOP  
Extended Temperature Operation  
–40 °C to +85 °C  
Footprint Upgradeable to 4-Mbit and  
8-Mbit Boot Block Flash Memories  
ETOX™ IV Flash Technology  
New Design Recommendations:  
For new 2.7 V–3.6 V VCC designs with this device, Intel recommends using the Smart 3 Advanced Boot  
Block. Reference Smart 3 Advanced Boot Block 4-Mbit, 8-Mbit, 16-Mbit Flash Memory Family datasheet,  
order number 290580.  
For new 5 V VCC designs with this device, Intel recommends using the 2-Mbit Smart 5 Boot Block. Reference  
Smart 5 Flash Memory Family 2, 4, 8 Mbit datasheet, order number 290599.  
These documents are also available at Intel’s website, http://www.intel.com/design/flcomp.  
December 1997  
Order Number: 290531-005  

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