Datasheet > E28F016SV-070

E28F016SV-070

更新时间： 2024-01-24 11:51:25

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
63页	633K
描述
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY

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数据手册

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E28F016SV-070 数据手册

28F016SV

16-MBIT (1 MBIT x 16, 2 MBIT x 8)

FlashFile™ MEMORY

Includes Commercial and Extended Temperature Specifications

SmartVoltage Technology

Backwards-Compatible with 28F016SA,

28F008SA Command Set

User-Selectable 3.3V or 5V V_CC

User-Selectable 5V or 12V V_PP

Revolutionary Architecture

Multiple Command Execution

Program during Erase

Command Super-Set of the Intel

28F008SA

65 ns Access Time

1 Million Erase Cycles per Block

30.8 MB/sec Burst Write Transfer Rate

Page Buffer Program

0.48 MB/sec Sustainable Write Transfer

Rate

2 µA Typical Deep Power-Down

32 Independently Lockable Blocks

Configurable x8 or x16 Operation

56-Lead TSOP and SSOP Type I

Packages

State-of-the-Art 0.6 µm ETOX™ IV Flash

Technology

Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for

designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative

capabilities, low-power operation, user-selectable V_PPvoltage and high read/program performance, the

28F016SV enables the design of truly mobile, high-performance personal computing and communications

products.

The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state

storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and

28F016SA 16-Mbit FlashFile memories), extended cycling, flexible V_CCand V_PPvoltage (SmartVoltage

technology), fast program and read performance and selective block locking, provide a highly-flexible memory

component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.

The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V

and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor

interface. The flexible block locking option enables bundling of executable application software in a Resident

Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology.

July 1997

Order Number: 290528-007

7/11/97 11:03 AM 29052807.DOC

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与E28F016SV-070相关器件

型号	品牌	获取价格	描述	数据表
E28F016SV-075	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
E28F016SV-080	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
E28F016SV-120	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
E28F016SV65	INTEL	获取价格	Flash, 2MX8, 65ns, PDSO56, TSOP1-56
E28F016XD-85	INTEL	获取价格	16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
E28F016XD-95	INTEL	获取价格	Flash, 1MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
E28F016XS15	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS-15	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS20	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS-20	INTEL	获取价格	16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY